| 摘要 |
<p>According to this nitride semiconductor growth apparatus, the portions (i.e., gas introduction part (112), current introduction part (145), viewport part (160), etc.) in contact with a nitrogen-containing raw material gas in the region from a reaction unit (102) to an upstream-side reaction unit (102) for the flow of the raw material gas are made from a non-copper-based material (i.e., a material that does not contain copper). It is thereby possible to prevent the raw material gas from becoming contaminated by copper. Accordingly, the nitride semiconductor can be prevented from becoming contaminated by copper, and electrons and holes can be prevented from becoming trapped in the nitride semiconductor. A nitride semiconductor growth apparatus capable of creating a nitride semiconductor in which current collapse can be minimized is thereby provided.</p> |
