发明名称 |
FILM DEPOSITION METHOD |
摘要 |
<p>Provided is a film deposition method capable of improving the crystal characteristic near an interface according to the lattice constant of a material that will constitute a thin film to be deposited. Specifically, a substrate is curved relative to the direction along one main surface on which the thin film is to be deposited, according to the lattice constant the material that will constitute the thin film to be deposited and the lattice constant of a material constituting the one main surface. The thin film is deposited on the one main surface of the substrate with the substrate curved.</p> |
申请公布号 |
EP2312616(B1) |
申请公布日期 |
2013.08.07 |
申请号 |
EP20090770224 |
申请日期 |
2009.06.25 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HASHIMOTO, SHIN;TANABE, TATSUYA |
分类号 |
C30B25/02;C30B29/40;H01L21/02 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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