| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a transistor having favorable electric characteristics and high reliability, and provide a display device using the transistor. <P>SOLUTION: A bottom-gate transistor using an oxide semiconductor for a channel region, comprises an active layer composed of an oxide semiconductor layer dehydrated or dehydrogenated by heat treatment. The active layer includes a first region on a fine crystallized superficial layer part and a second region other than the first region. By using the oxide semiconductor layer having such a structure, a change to an n-type due to re-entry of moisture from the superficial layer part or elimination of oxygen, and generation of a parasitic channel, are suppressed. And contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced. <P>COPYRIGHT: (C)2013,JPO&INPIT |
