| 摘要 |
An external DC power supply 2 feeds a power supply voltage to a drain electrode of a MOSFET 10 constituted by silicon carbide (SiC), and a variable bias voltage generated from thus fed power supply voltage is applied to a gate electrode 13, so as to raise the temperature of the MOSFET 10. To a voltage divided by resistors R3, R4 from the power supply voltage, a change in a voltage divided by resistors R1, R2 from the power supply voltage is amplified by a predetermined negative amplification factor in the MOSFET 20 and added at a drain electrode 21, so that the drain electrode 21 attains a fixed voltage, whereby the bias voltage is held constant.
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