<p>An image sensor includes (a) a first wafer having (i) a photosensitive area; (ii) a charge-to-voltage conversion region; (b) a second wafer having (i) a first amplifier that receives a signal from the charge-to-voltage conversion region; (c) an electrical interconnect connecting the charge-to-voltage conversion region to an input of the amplifier; (d) an electrically biased shield at least partially enclosing at least a portion of the electrical interconnect.</p>
申请公布号
EP2324506(B1)
申请公布日期
2013.05.08
申请号
EP20090789262
申请日期
2009.09.04
申请人
OMNIVISION TECHNOLOGIES, INC.
发明人
MCCARTEN, JOHN P.;SUMMA, JOSEPH R.;ANDERSON, TODD;TIVARUS, CHRISTIAN ALEXANDRU