发明名称 |
MEMORY DEVICE USING ERROR CORRECTING CODE AND SYSTEM THEREOF |
摘要 |
A memory device using error correcting code and a system including the same are provided. The memory system includes a memory device, and a storage block connected to the memory device. The memory device includes a normal cell region including a first plurality of memory cells for storing data bits, and an error correcting code (ECC) cell region including a second plurality of memory cells for storing first through mth sets of ECC bits. The storage block includes a third plurality of memory cells for storing first through nth sets of the ECC bits. Each memory cell of the first and second plurality of memory cells is a first type of memory cell and each memory cell of the third plurality of memory cells is a second type of memory cell different from the first type of memory cell.
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申请公布号 |
US2012173956(A1) |
申请公布日期 |
2012.07.05 |
申请号 |
US201113339716 |
申请日期 |
2011.12.29 |
申请人 |
JEON SEONG HYUN;CHUNG HOI JU |
发明人 |
JEON SEONG HYUN;CHUNG HOI JU |
分类号 |
H03M13/05;G06F11/10 |
主分类号 |
H03M13/05 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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