One Time Programming Memory and Method of Storage and Manufacture of the Same

摘要

The present invention relates to a one time programming memory and method of storage and manufacture of the same. It belongs to microelectronic memory technology and manufacture field. The one time programming memory comprises a diode (10) having a unidirectional conducting rectification characteristic and a variable-resistance memory (20) having a bipolar conversion characteristic. The diode (10) having the unidirectional conducting rectification characteristic and the variable-resistance memory (20) having the bipolar conversion characteristic are connected in series. The one time programming memory device of the present invention takes the bipolar variable-resistance memory (20) as a storage unit, programming the bipolar variable-resistance memory (20) into different resistance states so as to carry out multilevel storage, and takes the unidirectional conducting rectification diode (10) as a gating unit. The rectification characteristic of unidirectional conducting rectification diode (10) can not only enable the bipolar variable-resistance storage (20) to be programmed only once but also inhibit crosstalk in a cross-array structure. The one time programming memory of the present invention is suitable to integration of the cross-array structure. It has the advantages like a simple structure, easy integration and high density. It can achieve multilevel storage and reduce the cost, which contribute to widely spreading and application of the present invention.