发明名称 DEPOSITION OF LAYER USING DEPOSITING APPARATUS WITH RECIPROCATING SUSCEPTOR
摘要 Atomic layer deposition is performed by reciprocating a susceptor in two directions, subjecting a substrate on the susceptor to two different sequences of processes. By subjecting the susceptor to different sequences of processes, the substrate undergoes different processes that otherwise would have required an additional set of injectors or reactors. The reduced number of injectors or reactors enables a more compact deposition device, and reduces the cost associated with the deposition device.
申请公布号 US2012094149(A1) 申请公布日期 2012.04.19
申请号 US201113273076 申请日期 2011.10.13
申请人 LEE SANG IN;HWANG CHANG WAN;SYNOS TECHNOLOGY, INC. 发明人 LEE SANG IN;HWANG CHANG WAN
分类号 C23C16/18;B32B9/04 主分类号 C23C16/18
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