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经营范围
发明名称
Sputtering-Less Ultra-Low Energy Ion Implantation
摘要
Methods of implanting dopants into a silicon substrate using a predeposited sacrificial material layer with a defined thickness that is removed by sputtering effect is provided.
申请公布号
US2011212608(A1)
申请公布日期
2011.09.01
申请号
US201113098607
申请日期
2011.05.02
申请人
QIN SHU;LI LI
发明人
QIN SHU;LI LI
分类号
H01L21/265
主分类号
H01L21/265
代理机构
代理人
主权项
地址
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