发明名称 Insulation structure for high temperature conditions and manufacturing method thereof
摘要 An insulation structure for high temperature conditions and a manufacturing method thereof. In the insulation structure, a substrate has a conductive pattern formed on at least one surface thereof for electrical connection of a device. A metal oxide layer pattern is formed on a predetermined portion of the conductive pattern by anodization, the metal oxide layer pattern made of one selected from a group consisting of Al, Ti and Mg.
申请公布号 US7998879(B2) 申请公布日期 2011.08.16
申请号 US20070723236 申请日期 2007.03.19
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD.;SAMSUNG LED CO., LTD. 发明人 LEE YOUNG KI;CHOI SEOG MOON;SHIN SANG HYUN
分类号 H01L21/31;H01L23/02 主分类号 H01L21/31
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