发明名称 |
Insulation structure for high temperature conditions and manufacturing method thereof |
摘要 |
An insulation structure for high temperature conditions and a manufacturing method thereof. In the insulation structure, a substrate has a conductive pattern formed on at least one surface thereof for electrical connection of a device. A metal oxide layer pattern is formed on a predetermined portion of the conductive pattern by anodization, the metal oxide layer pattern made of one selected from a group consisting of Al, Ti and Mg.
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申请公布号 |
US7998879(B2) |
申请公布日期 |
2011.08.16 |
申请号 |
US20070723236 |
申请日期 |
2007.03.19 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD.;SAMSUNG LED CO., LTD. |
发明人 |
LEE YOUNG KI;CHOI SEOG MOON;SHIN SANG HYUN |
分类号 |
H01L21/31;H01L23/02 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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