| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for producing a nitride single crystal, which can increase a growth rate of a crystal. SOLUTION: The apparatus 1 for producing a nitride single crystal 24 includes at least: a growth vessel 4 having an opening in an upper part and storing a raw material 22 in an inner bottom part; a susceptor 3 closing the opening; a seed substrate 23 disposed opposing to the raw material 22; and a plurality of heating means 7a, 7b, 7c disposed in the outer circumference of the growth vessel 4. Heat-shielding members 11a, 11b are disposed respectively in the intervals of the heating means 7a, 7b, 7c, and a heat shielding member 12 is disposed between the heating means 7c and a growing part A of the growth vessel 4. COPYRIGHT: (C)2011,JPO&INPIT
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