Substrate carrier for a vertical sputter-coating apparatus, comprises a substrate to be coated, where the substrate carrier is held through a sputter-coating chamber, where the substrate carrier is formed as rear support plate

摘要

The substrate carrier (2) for a vertical sputter-coating apparatus, comprises a substrate (1) to be coated, where the substrate carrier is held through a sputter-coating chamber (10). The substrate made of a material, which is selected from one of the classes of insulator, semiconductor and a conductor. The substrate carrier is covered on its substrate-receiving side by a sheath (3) against plasma in the coating chamber. The sheath covers the substrate carrier under the release of the surface of the substrate to be coated. The sheath consists of sheathing elements. The substrate carrier (2) for a vertical sputter-coating apparatus, comprises a substrate (1) to be coated, where the substrate carrier is held through a sputter-coating chamber (10). The substrate made of a material, which is selected from one of the classes of insulator, semiconductor and a conductor. The substrate carrier is covered on its substrate-receiving side by a sheath (3) against plasma in the coating chamber. The sheath covers the substrate carrier under the release of the surface of the substrate to be coated. The sheath consists of sheathing elements, which are detachably fastened to the substrate carrier using a fastening unit. The sheath consists of material selected from one of the classes of insulator, semiconductor and a conductor like the substrate. The ambient conditions of the coating processes deviate the relative permittivity of the material of the sheath around more than twice from the relative permittivity of the substrate material and/or the specific electrical conductivity of the material of the sheath deviates around more than two dimensions from the specific electrical conductivity of the substrate material. The relative permittivity of the material of the sheath is +- 10% of the relative permittivity of the substrate material. The substrate carrier is formed as rear support plate and the sheath functions as clamping element for the substrate in which it protrudes the substrate to an edge and holds the substrate on the substrate carrier. The substrate carrier is formed as clamping frame for the substrate and the sheath is formed in a plate-shaped manner and is fixed onto the substrate carrier to contact without the substrate. The size of the substrate carrier corresponds to the dimension of the plasma. The sheath overtops at its outer edges and the size of the sheath corresponds to the dimensions of the plasma.