SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAID DEVICE

摘要

It is an objective of the present invention to increase channel current density while allowing a GaN field effect transistor to perform normally-off operation. Provided is a a semiconductor device comprising a group 3-5 compound semiconductor channel layer including nitrogen; an electron supply layer that has a groove in a surface thereof that is opposite a surface facing the channel layer and that supplies the channel layer with electrons; a p-type semiconductor layer that is formed in the groove of the electron supply layer; and a control electrode formed directly on the p-type semiconductor layer or on an intermediate layer formed on the p-type semiconductor layer.