| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon wafer which eliminates crystal defects in a wafer surface layer and further improves gettering performance, and to provide a method for manufacturing the silicon wafer. SOLUTION: The silicon wafer cut from a silicon single crystal ingot grown by the Czochralski method is subjected to RTA treatment in a nitride gas atmosphere to form oxide films on both the surfaces of the wafer, then a polysilicon layer is formed and finally the polysilicon layer formed on the surface side of the wafer is removed (1). The polysilicon layer may be formed only on the backside without being formed on both the surfaces of the wafer. It is preferred to use a wafer composed of a defect-free area as a raw material because a defect-free layer can be stably secured on a wafer surface layer. The silicon wafer manufactured by the method is a wafer improving the gettering performance as the entire wafer (2). COPYRIGHT: (C)2011,JPO&INPIT
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