发明名称 |
Schottky diode and method of fabricating the same |
摘要 |
A schottky diode may include a schottky junction including a well formed in a semiconductor substrate and a first electrode contacting the first well. The well may have a first conductivity type. A first ohmic junction may include a first junction region formed in the well and a second electrode contacting the first junction region. The first junction region may have a higher concentration of the first conductivity type than the well. A first device isolation region may be formed in the semiconductor substrate separating the schottky junction and the first ohmic junction. A well guard having a second conductivity type opposite to the first conductivity type may be formed in the well. At least a portion of the well guard may be formed under a portion of the schottky junction.
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申请公布号 |
US2010200945(A1) |
申请公布日期 |
2010.08.12 |
申请号 |
US20100662452 |
申请日期 |
2010.04.19 |
申请人 |
KIM DAE-SHIK;KWON OH-KYUM;KIM MYUNG-HEE;KIM YONG-CHAN;PARK HYE-YOUNG;OH JOON-SUK |
发明人 |
KIM DAE-SHIK;KWON OH-KYUM;KIM MYUNG-HEE;KIM YONG-CHAN;PARK HYE-YOUNG;OH JOON-SUK |
分类号 |
H01L29/872 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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