PRODUCTION OF SINGLE CRYSTAL CVD DIAMOND RAPID GROWTH RATE
摘要
In a method of producing diamonds by microwave plasma-assisted chemical vapor deposition which comprises providing a substrate and establishing a microwave plasma ball in an atmosphere comprising hydrogen, a carbon source and oxygen at a pressure and temperature sufficient to cause the deposition of diamond on said substrate, the improvement wherein the diamond is deposited under a pressure greater than 400 torr at a growth rate of at least 200 µm/hr. from an atmosphere which is either essentially free of nitrogen or includes a small amount of nitrogen.
申请公布号
WO2010068419(A2)
申请公布日期
2010.06.17
申请号
WO2009US65657
申请日期
2009.11.24
申请人
CARNEGIE INSTITUTION OF WASHINGTON;YAN, CHIH-SHIUE;MAO, HO-KWANG;HEMLEY, RUSSELL;LIANG, QI;MENG, YUFEI