发明名称 NON VOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF
摘要 PURPOSE: A nonvolatile memory device and an operation method thereof are provided to optimize the read-out operation by controlling the execution of the read-out operation based on each plane according to the program state of a device. CONSTITUTION: An address decoder(630) outputs a first plane selection signal and a second plane selection signal by decoding an external input address. A controller(660) outputs a first plane hold signal and a second plane hold signal according to the program state of a first plane and a second plane. A first plane controller(610) controls the driving of the first plane according to the first plane hold signal and the first plane selection signal. A second plane controller(620) controls the driving of the second plane according to the second plane hold signal and the second plane selection signal. The first plane controller comprises the exclusive OR gate.
申请公布号 KR20100054479(A) 申请公布日期 2010.05.25
申请号 KR20080113427 申请日期 2008.11.14
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YOON, MI SUN
分类号 G11C16/34;G11C16/08;G11C16/32 主分类号 G11C16/34
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