| 摘要 |
<p>The present invention provides a semiconductor device (10) comprising a first active layer (3) on a substrate (1), a second active layer (4) on the first active layer (3), the second active layer (4) having a higher bandgap compared to the first active layer (3), being substantially Ga-free and comprising at least Al, a gate insulating layer (5) on at least a part of the second active layer (4), the gate insulating layer (5) being formed by thermal oxidation of at least a part of the second active layer (4), a gate electrode (6) on at least a part of the gate insulating layer (5) and a source electrode (7) and drain electrode (8) on the second active layer (4). The semiconductor device (10) furthermore comprises, when in operation and when the gate electrode (6) and source electrode (7) are at a same voltage, a two-dimensional electron gas (2-DEG) layer between the first active layer (3) and the second active layer (4) only outside the location of the gate electrode (6) and not at the location of the gate electrode (6). The present invention also provides a method for forming such a semiconductor device (10).</p> |
