| 摘要 |
PROBLEM TO BE SOLVED: To provide a Schottky barrier diode which is improved in reverse direction withstand voltage with a field plate structure. SOLUTION: The Schottky barrier diode includes an epitaxial layer of a gallium nitride compound having a principal surface, a nitride insulating layer formed on the principal surface and having an opening formed, a Schottky electrode formed in the opening in contact with the principal surface, and a field plate electrode electrically connected to the Schottky electrode and formed overlapping with the nitride insulating layer; and the fixed charge density on the interface between the nitride insulating layer and epitaxial layer being <1.2×10<SP>12</SP>cm<SP>-2</SP>. COPYRIGHT: (C)2010,JPO&INPIT |
