SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, INTEGRATED SEMICONDUCTOR DEVICE USING ITS SEMICONDUCTOR DEVICE AND NONVOLATILE SEMICONDUCTOR STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor element having steep switching characteristics at a low voltage in an insulating gate field-effect transistor. SOLUTION: In a MOSFET for a planar type logic circuit used for a large-scale integrated circuit, a diode element and a resistive element are formed in a drain diffusion-layer electrode in a parallel layout. Consequently, a high-performance transistor indicating a steep change in a drain current to a gate-voltage change even at the low voltage can be obtained. COPYRIGHT: (C)2010,JPO&INPIT