发明名称 SEMICONDUCTOR DEVICE
摘要 <p>A Voltage-Adaptor capable of converting an externally supplied high voltage connected e.g. to the drain of a MOS or other semiconductor device to a lower voltage. The device comprises a first structure (225) comprising an at least partially conducting material, the voltage adaptor being arranged to influence a first voltage at a portion of a second structure (222) comprising a semiconductor material such that the first voltage at said portion of the second structure is different from a second voltage applied to the second structure, wherein the first structure is arranged to be connected to a bias voltage, and the voltage adaptor further comprises an insulating material (155) arranged to separate the first and second structures.</p>
申请公布号 WO2009109587(A1) 申请公布日期 2009.09.11
申请号 WO2009EP52522 申请日期 2009.03.03
申请人 X-FAB SEMICONDUCTOR FOUNDRIES AG;HU, YONG HAI;KHO, ELIZABETH CHING TEE;LIU, ZHENG CHAO;TIONG, MICHAEL MEE GOUH;LIU, JIAN;KEE, KIA YAW;LAU, WILLIAM SIANG LIM 发明人 HU, YONG HAI;KHO, ELIZABETH CHING TEE;LIU, ZHENG CHAO;TIONG, MICHAEL MEE GOUH;LIU, JIAN;KEE, KIA YAW;LAU, WILLIAM SIANG LIM
分类号 H01L29/45;H01L29/40;H01L29/78 主分类号 H01L29/45
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