Polycrystalline silicon manufacturing apparatus and manufacturing method

摘要

A polycrystalline silicon manufacturing apparatus efficiently produces high-quality polycrystalline silicon. There is provided a polycrystalline silicon manufacturing apparatus, in which a plurality of gas supplying ports 6A for ejecting raw gas upward in a reactor 1 and gas exhausting ports 7 for exhausting exhaust gas after a reaction are provided on an inner bottom of the reactor 1 in which a plurality of silicon seed rods 4 are stood, the silicon seed rods 4 are heated and the polycrystalline silicon is deposited from the raw gas on the surfaces. The apparatus includes gas distributing tubes 9 that are respectively connected to the gas supplying ports 6A and respectively supply the raw gas to the gas supplying ports 6A, valves 21 that are provided on at least the gas distributing tubes connected to the gas supplying ports 6A adjacent to a center of the reactor 1 and open or close conduit lines of the gas distributing tubes 9, and a valve controlling device 22 that is connected to the valves 21 and controls the conduit lines to be closed for a predetermined time at an early stage of the reaction.