| 摘要 |
A method for forming thin film patterns and a semiconductor manufacturing method thereof are provided to obtain a uniform thin film pattern having a small size. A plurality of underlying layers are formed on a semiconductor substrate(100) to be spaced from each other. Insulating patterns(130) are formed on the semiconductor substrate so as to expose the space between neighboring underlying layers and a portion of neighboring underlying layers. Thin film patterns are formed on entire surface of the semiconductor substrate. The thin film patterns are etched so as to remain lateral portion of the insulating patterns.
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