| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a magnetic memory element which is free from an adverse influence on a peripheral region other than a memory cell region, and to provide a manufacturing method thereof. SOLUTION: A memory cell has an insulating film 13 formed over the entire surface on an interlayer insulating film 4 including a bit line portion BL1, and also has, on the insulating film 13, a high-magnetic-permeability film 14 formed in a region corresponding to a formation position of the bit line portion BL1 and a high-magnetic-permeability film 12. An interlayer insulating film 15 is formed over the entire surface on the insulating film 13 including the high-magnetic-permeability film 14. In a peripheral circuit region, on the other hand, the insulating film 13 is deposited over the entire surface including a part over a bit line 10. On the insulating film 13, the interlayer insulating film 15 is formed directly and the high-magnetic-permeability film 14 is not formed. COPYRIGHT: (C)2009,JPO&INPIT |
