| 摘要 |
PURPOSE:To provide a transistor having an excellent high speed characteristic and considerably reduced base resistance, by providing a flush type of metal to be in contact with the base. CONSTITUTION:An N-type Si layer 22 serving as a collector, P-type semiconductor layer 23 serving as a base, and NiSi2 layer 24 serving as a metal electrode region are grown on an Si substrate 21 using a molecular beam epitaxy (MBE), and the unnecessary NiSi2 film is removed by ion milling. Moreover, a P-type semiconductor layer 25 and N-type semiconductor layer 26 serving as an emitter layer are formed by MBE. Element separation is done, and an insulating layer 30, emitter electrode 27, base electrode 28 and collector electrode are formed. As compared with a prior bi-polar transistor, the base resistance can be reduced to about 1/5 and the cut-off frequency can be increased by a factor of two. |
