METHOD FOR MANUFACTURING THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a wurtzite thin film having c-axis uniaxially oriented in the plane of the thin film with a higher precision than those of conventional ones.

SOLUTION: The raw material of a thin film is deposited on the surface of a substrate in irradiating an ion beam so that at least a part of it is incident on the surface of the substrate 21 with an angle of≤10°. At that time, by irradiating a part of the ion beam not incident on the surface of the substrate on a target 22 consisting of the thin film raw material and sputtering the target 22, the thin film raw material thus sputtered can be deposited on the surface of the substrate 21. By these ion beam irradiations, the thin film having c-axis oriented along the orthogonal projection of the ion beam onto the surface of the substrate is formed.

COPYRIGHT: (C)2009,JPO&INPIT