| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, such as a CMOS with a silicide electrode having a work function suitable for each of nMOSTr and pMOSTr. SOLUTION: The method includes a step of forming an electrode pattern made of an element, such as silicon, in nMOS and pMOS regions on a semiconductor substrate via a gate insulating film; a step of masking the nMOS region containing the electrode pattern by an insulating film pattern before forming a first metal film, such as Pd, Pt, on an entire surface; a step of performing heat treatment to form the gate electrode made of the silicide of a first metal; a step of performing thermal oxidation treatment to form a silicon oxide film on a surface of the gate electrode before dissolving the unreacted first metal film for removal; a step of masking the pMOS region including the electrode pattern by the insulating film pattern before forming a second metal film, such as Er, Y, on an entire surface; a step of performing the heat treatment to form the gate electrode made of the silicide of the second film; and a step of dissolving the unreacted second metal film for removal. COPYRIGHT: (C)2007,JPO&INPIT
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