| 摘要 |
<p>A method for forming the gate of the semiconductor device and a semiconductor device and a manufacturing method thereof are provided to improve the device character and the reliability by improving the GIDL(Gate Induced Drain Leakage) phenomenon of the semiconductor device. The semiconductor device includes the semiconductor substrate(100) in which the groove is formed on the gate forming area; the gate including the insulating layer formed in the upper part of the groove side contacting the source formation area; the source area and the drain area which are respectively formed within the both sides of the gate. The semiconductor substrate includes the active area including the gate forming area, the source formation area and the drain formation area(108).</p> |
