| 摘要 |
<p>A high-withstand voltage transistor a semiconductor device having the same and a method for manufacturing the same are provided to prevent a gate oxide film from being damaged by a surge voltage/current. A gate electrode(4) is formed in a first trench(7) formed on a first conductive semiconductor substrate. A source(5) and a drain(6) are formed on both sides of the gate electrode. The source and the drain are apart from the gate electrode by a predetermined distance. First electric field relaxation layers(2) are formed on a wall of the trench on the side of the source and the drain. Second electric field relaxation layers(3) are formed between the source and the gate electrode to surround the source and drain. A withstand voltage of a drain/source diffusion layer is 1 to 3 V lower than that of a transistor.</p> |
