RESISTIVE MEMORY DEVICE

摘要

A system (10) having a memory cell (60). In certain embodiments, the memory cell (60) includes a resistive memory element (66), an access transistor (68) having a gate, a first terminal, and a second terminal, and a control transistor (70) having a gate, a first terminal, and a second terminal. The first terminal of the access transistor (68) may be coupled to the resistive memory element (66), and the gate of the access transistor (68) may be coupled to the gate of the control transistor (70). Additionally, the first terminal of the control transistor (70) may be coupled to the resistive memory element (66).