发明名称 |
METHOD FOR MACHINING NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING LIGHT EMISSION DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for machining a nitride semiconductor substrate capable of securely machining grooves at a low cost in a nitride semiconductor substrate, and to provide a method for producing a light emission device. <P>SOLUTION: The method for machining a nitride semiconductor substrate comprises: a stage where a nitride semiconductor substrate is prepared; and a machining stage by a femtosecond laser. In the machining stage, the surface of a nitride semiconductor substrate is irradiated with a femto second laser, and a part of the surface of the nitride semiconductor substrate is removed, so as to form a recessed part on the surface. The energy fluence of the femtosecond laser used in the machining stage is 1×10<SP>-4</SP>to 5 J/cm<SP>2</SP>. <P>COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2007222895(A) |
申请公布日期 |
2007.09.06 |
申请号 |
JP20060045523 |
申请日期 |
2006.02.22 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
KITABAYASHI HIROYUKI;TANABE KEIICHIRO;NAGAI YOICHI;KATAYAMA KOJI |
分类号 |
B23K26/36;B23K26/00;H01L33/32;H01S3/00 |
主分类号 |
B23K26/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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