发明名称 |
Method and apparatus for in situ depositing of neutral Cs under ultra-high vacuum to analytical ends |
摘要 |
The present invention relates to a method for modifying the electronic properties of a surface to analytical ends, such as SIMS or electron spectroscopy, characterised in that it comprises in situ deposition of pure neutral cesium (Cs<SUP>0</SUP>), under ultra-high vacuum, said neutral cesium being enabled in the form of a collimated adjustable stream. The invention relates also to the special column designed for implementing the method and to the corresponding energy and/or mass analyser instrument.
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申请公布号 |
US7205534(B2) |
申请公布日期 |
2007.04.17 |
申请号 |
US20050531194 |
申请日期 |
2005.04.13 |
申请人 |
CENTRE DE RECHERCHE PUBLIC-GABRIEL LIPPMANN |
发明人 |
MIGEON HENRI NOEL;WIRTZ TOM |
分类号 |
H01J49/00;G01N23/225;H01J37/305 |
主分类号 |
H01J49/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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