Semiconductor Device Having a Fully Silicided Gate Electrode and Method of Manufacture Therefor

摘要

The present invention provides a semiconductor device, a method of manufacture therefor, and a method for manufacturing an integrated circuit. The semiconductor device ( 100 ), among other possible elements, includes a silicided gate electrode ( 150 ) located over a substrate ( 110 ), the silicided gate electrode ( 150 ) having gate sidewall spacers ( 160 ) located on sidewalls thereof. The semiconductor device ( 100 ) further includes source/drain regions ( 170 ) located in the substrate ( 110 ) proximate the silicided gate electrode ( 150 ), and silicided source/drain regions ( 180 ) located in the source/drain regions ( 170 ) and at least partially under the gate sidewall spacers ( 160 ).