METHOD FOR FORMING A ONE MASK HYPERABRUPT JUNCTION VARACTOR USING A COMPENSATED CATHODE CONTACT
摘要
A semiconductor structure comprising a hyperabrupt junction varactor with a compensated cathode contact as well as a method of fabricating the same are disclosed. The method includes a single implant mask which is used in forming the subcollector/cathode, collector/well and hyperabrupt junction.
申请公布号
WO2006073943(A3)
申请公布日期
2007.03.01
申请号
WO2005US47085
申请日期
2005.12.22
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;COOLBAUGH, DOUGLAS, D.;FURKAY, STEPHEN, S.;JOHNSON, JEFFREY, B.;RASSEL, ROBERT, M.
发明人
COOLBAUGH, DOUGLAS, D.;FURKAY, STEPHEN, S.;JOHNSON, JEFFREY, B.;RASSEL, ROBERT, M.
