| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS semiconductor device which is used as a high-voltage resistant switching power supply IC. SOLUTION: The MOS semiconductor device comprises a p-type semiconductor board 1, an n-type extended drain region 32, an n-type source region 4, a source electrode 5, a gate electrode 6, an n-type high-concentration drain region 34, an isolation oxide film 41, an interlayer insulating film 38, a drain electrode 35, a gate oxide film 11, a drain contact window 45, a source contact window 13, and a contact window 46. The semiconductor board 1 is provided with the extended drain region 32 having the reverse conducting type high-concentration drain region 34. The extended drain region 32 includes a p-type first impurity region 40 and a p-type second impurity region 37 in contact with the first impurity region 40, and the first/second regions 40, 37 are formed under the isolated oxide film 41. The second region 37 is composed of a plurality of cylindrical or square pillar-like impurity layers 37a, 37b, and is arranged vertically relative to the board 1. The cylindrical impurity layers 37a, 37b are arranged to be alternate with each other. The source electrode 5 is connected electrically to an electrode 42 via metal wire. COPYRIGHT: (C)2007,JPO&INPIT
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