MEMORY DEVICE HAVING A HIGHLY INTEGRATED CELL STRUCTURE AND FABRICATION METHOD THEREOF

摘要

A memory device and a manufacturing method thereof are provided to embody a highly integrated cell structure by aligning a plurality of data storage elements with bit lines. A memory device includes a mold insulating layer, at least one conductive line and a plurality of data storage elements. The mold insulating layer(110) is formed on a semiconductor substrate(100). The conductive line is formed on the mold insulating layer. The plurality of data storage elements(147a) are interposed between the conductive line and the mold insulating layer. The plurality of data storage elements are exactly aligned with the conductive line. The data storage element is composed of a resistor pattern and a barrier pattern. The resistor pattern is a material layer and the barrier pattern is a nitride layer.