| 摘要 |
A semiconductor device of the present invention includes: an SOI substrate that is a semiconductor wafer on which a semiconductor active layer is formed via a laminated insulating film; an insulating film which is arranged in a device isolation region surrounding an element forming region of the SOI substrate, and on the semiconductor active layer, and has a plurality of network shaped openings; and an gettering region arranged in the semiconductor active layer adjacent to the openings.
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