| 摘要 |
An electron source apparatus (10) includes a plurality of electron emission portions (4) arranged in a matrix on a Si substrate (1), and a plurality of emitter lines (3) and a plurality of gate lines (8) that are orthogonal to each other, and each of the plurality of electron emission portions (4) being controlled by signals from the plurality of emitter lines (3) and the plurality of gate lines (8) to perform an independent electron emission operation (4). Furthermore, device isolation regions (2) are provided surrounding the respective plurality of emitter lines (3), contact holes (3a) are formed in the respective plurality of emitter lines (3), a plurality of emitter line mounting electrodes (7) that correspond to the respective plurality of emitter lines (3) are provided in a region outside regions that are surrounded by the device isolation regions (2), and conductors (6) that are connected to the respective plurality of emitter line mounting electrodes (7) are connected via the contact holes (3a) to the respective plurality of emitter lines (3) corresponding to the respective plurality of emitter line mounting electrodes (7). Accordingly, the electron source apparatus (10) can achieve high density and size reduction.
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