| 摘要 |
A ferro-electric memory device includes a first ferro-electric capacitor which is selectively formed on a first insulating film and has a first lower electrode, a first ferro-electric film, and a first upper electrode, a first hydrogen barrier film which has first to third portions, the first portion being formed on the first insulating film, the second portion covering the side surfaces of the first lower electrode, first ferro-electric film, and first upper electrode, and the third portion being formed on the upper surface of the first upper electrode, a first interlayer formed on the second portion, and a second hydrogen barrier film which has fourth to sixth portions, the fourth portion having a first contact portion which comes into contact with at least part of the first portion, the fifth portion being formed on the first interlayer, and the sixth portion being formed on the third portion.
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