Fabrication of semiconductor component, e.g. micro-mechanical diaphragm sensor, by forming second region of second doping above first region of first doping, dissolving semiconductor material in first region, and depositing sealing layer

摘要

Fabrication of semiconductor component, e.g. micro-mechanical diaphragm sensor, includes providing a second region of second doping above part(s) of first region of first doping in or on substrate surface, with part(s) of second region being configured as crosspieces; partially dissolving out semiconductor material in parts of first region; depositing a sealing layer above the second region; and providing a cavity from part(s) of first region. Fabrication of semiconductor component, e.g. micro-mechanical diaphragm sensor, comprising a semiconductor substrate having a first region with first doping, a diaphragm, and a cavity located partially below the diaphragm, includes: providing a second region having a second doping above part(s) of first region in or on substrate surface, with part(s) of second region being configured as crosspieces; partially dissolving out the semiconductor material in part of the first region; depositing a sealing layer above the second region to seal the surface above the first region starting out from part(s) of the crosspieces of the second region in at least one of lateral direction and vertical direction; and providing the cavity from part(s) of the first region. The diaphragm is formed by the deposited sealing layer. It includes part(s) of the crosspieces. An independent claim is also included for a semiconductor component designed as micro-mechanical diaphragm sensor comprising: a semiconductor substrate having a first region of first doping, and a cavity provided in part(s) of first region; second region having a second doping distinguishable from the first doping, and part(s) designed as crosspieces; and a diaphragm of monocrystalline, epitaxial layer mounted on the crosspieces.