| 摘要 |
A stabilised siloxane dielectric precursor, for use in a chemical vapour deposition (CVD) process, dosed with a stabilising agent or agents selected from free radical inhibitors, end-capping agents or a mixture thereof. Preferred siloxane dielectric precursors are cyclosiloxanes such as polyhedral oligomeric silsesquioxanes (POSS), octamethylcyclotetrasiloxane (OMCTS), hexamethylcyclotetrasiloxane (HMCTS), tetramethylcyclotetrasiloxane (TMCTS) and mixtures thereof. Suitable end-capping agents are monofunctional silylating agents having a formula R<1>R<2>R<3>SiX, wherein X is a reactive site and R<1>-R<3> are hydrogen, C1-C8 alkyl or C5-C12 aryl, preferably silyl-N-methylacetamides, naphthylphenylmethylsilanol (NPMS), trifluoropropyldimethylsilyl-N-methylacetamide (TFSA), bis(trimethylsilyloxy)methylsilane or hexamethyldisilazane. Suitable radical inhibitors include phenols such as butylated hydroxy toluene (BHT), hydroquinone or butylated hydroxyanisole (BHA), and diphenylamine. A process for stabilizing a cyclosiloxane dielectric precursor, optionally including azeotropic distillation and/or treatment with an absorbent bed material such as CaO, and a CVD process using the stabilised cyclosiloxane are also outlined. |
