发明名称 |
SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD AND APPARATUS FOR MANUFACTURING THEM |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor structure, a semiconductor device, and a method and apparatus for manufacturing them which can improve the electric characteristic of an active element. SOLUTION: The semiconductor device has a non-single-crystal semiconductor film (14), a supporting substrate (12) for supporting the non-single-crystal semiconductor film (14), and an active element (10) having a portion of the non-single-crystal semiconductor film (14) as its channel region (22). Especially, the channel region (22) has its oxygen and carbon concentration both of which do not exceed 1×10<SP>18</SP>atoms/cm<SP>3</SP>. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2004343039(A) |
申请公布日期 |
2004.12.02 |
申请号 |
JP20030399661 |
申请日期 |
2003.11.28 |
申请人 |
ADVANCED LCD TECHNOLOGIES DEVELOPMENT CENTER CO LTD |
发明人 |
HIRAMATSU MASAHITO;KIMURA YOSHINOBU;OGAWA HIROYUKI;JUMONJI MASAYUKI;YAMAMOTO YOSHITAKA;MATSUMURA MASAKIYO |
分类号 |
H01L21/20;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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