发明名称 SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD AND APPARATUS FOR MANUFACTURING THEM
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor structure, a semiconductor device, and a method and apparatus for manufacturing them which can improve the electric characteristic of an active element. SOLUTION: The semiconductor device has a non-single-crystal semiconductor film (14), a supporting substrate (12) for supporting the non-single-crystal semiconductor film (14), and an active element (10) having a portion of the non-single-crystal semiconductor film (14) as its channel region (22). Especially, the channel region (22) has its oxygen and carbon concentration both of which do not exceed 1×10<SP>18</SP>atoms/cm<SP>3</SP>. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004343039(A) 申请公布日期 2004.12.02
申请号 JP20030399661 申请日期 2003.11.28
申请人 ADVANCED LCD TECHNOLOGIES DEVELOPMENT CENTER CO LTD 发明人 HIRAMATSU MASAHITO;KIMURA YOSHINOBU;OGAWA HIROYUKI;JUMONJI MASAYUKI;YAMAMOTO YOSHITAKA;MATSUMURA MASAKIYO
分类号 H01L21/20;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):H01L29/786 主分类号 H01L21/20
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