| 摘要 |
A method of manufacturing a non-volatile semiconductor memory device, including forming a first gate insulating film, on a semiconductor substrate; forming a first conductive layer as the lowest layer of a charge-storage layer on the first gate insulating film; forming a masking material on the first conductive layer; etching the masking material, the first conductive layer, the first gate insulating film and the substrate so that side end portions thereof meet each other to form a trench; oxidizing a side wall of the trench and a side-wall surface of the first conductive layer; filling the trench with an isolation insulating film; exposing and peeling off the masking material to expose the upper surface of the first conductive layer; depositing a second conductive layer, which is the highest layer of the charge-storage layer, on the substrate; flattening the second conductive layer to be flush with the upper surface of the isolation insulating film; forming a second gate insulating film on the second conductive layer and the isolation insulating film; and forming a control gate material on the second gate insulating film.
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