发明名称 |
Method of forming a field effect transistor having a lateral depletion structure |
摘要 |
A method of forming a field effect transistor device includes: forming a well region of a second conductivity type in a semiconductor substrate of a first conductivity type, the semiconductor substrate having a major surface and a drain region; forming a source region of the first conductivity type in the well region; forming a trench gate electrode adjacent to the source region; forming a stripe trench extending from the major surface of the semiconductor substrate into the semiconductor substrate to a predetermined depth; and depositing a semiconductor material of the second conductivity type within the stripe trench.
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申请公布号 |
US6818513(B2) |
申请公布日期 |
2004.11.16 |
申请号 |
US20030741464 |
申请日期 |
2003.12.18 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
MARCHANT BRUCE D. |
分类号 |
H01L21/336;H01L29/06;H01L29/10;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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