| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that, when a film having no hygroscopic block resistance exists on an interlayer film having an Si-H coupling or Cu wiring, the capacitance between the wiring or the resistances of via holes are raised by moisture absorption. SOLUTION: In a semiconductor device, a silicon carbonitride film is formed on an insulating film having an Si-H coupling and Cu wiring. This silicon carbonitride film prevents deterioration of its underlying insulating film and Cu film caused by moisture absorption by playing the role of a hygroscopic block. Particularly, the effect becomes extremely high when the nitrogen concentration in the silicon carbonitride film is≥10 atm% and <35 atm%. COPYRIGHT: (C)2004,JPO&NCIPI
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