| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a dualdamascene structure without failure in positioning. SOLUTION: A semiconductor chip 20 comprises a substrate, a conductive layer 22, a protective layer 24, a dielectric layer 26, and a trench carved in the dielectric layer. A photo-resist layer 32 is deposited on the surface of the dielectric layer to fill in the trench. A limited aperture 32a is carved through the photo-resist layer approximately on the trench to expose the dielectric layer. A capping layer 34, which reduces the caliber of the aperture to a size within the trench, is deposited on the photo-resist layer. With a mask of the capping layer, the dielectric layer 26 and the protective layer 24 are etched to remove them until the conductive layer is exposed and then a contact hole is formed. The contact hole is filled with metal material to form the dualdamascene structure. COPYRIGHT: (C)2004,JPO
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