| 摘要 |
PURPOSE: To provide a method for manufacturing a semiconductor device having a self-aligned source structure in which both substrate contact holes and electrode contact holes can be opened simultaneously without increasing manufacturing steps, and the number of masks can be reduced. CONSTITUTION: In an etching step of an element isolation film in a single step of obtaining the self-aligned source structure in which a source line is formed on a gate electrode in self-aligned manner, a part, including a region formed with an electrode contact hole of a patterning insulating film 12 disposed on the gate electrode of a transistor formed with the electrode contact 29 on the gate electrode, is selectively removed simultaneously, and a part of the upper surface of the gate electrode is exposed.
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