| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device which facilitates the chambering the opening of a trench compared with a conventional method. SOLUTION: An oxidized film 12, having openings 13 at places on which trenches 14 are to be formed, is formed by a patterning process as a hard mask for etching upon forming the trenches 14 on the surface of a silicon substrate 11 by etching. Next, etching is effected while employing the oxidized film 12 as a mask in the trench forming process. Thereafter, the oxidized film 12 is removed from the silicon substrate 11 and isotropic etching is effected on the trenches 14 and the silicon substrate 11 in an isotropic etching process. COPYRIGHT: (C)2004,JPO
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