| 摘要 |
PURPOSE: A method for forming a tungsten gate of a semiconductor device is provided to be capable of restraining undercut and excessive slope phenomenon by uniformly conserving the flow rate of Cl2 : HBr while carrying out a gate etching process. CONSTITUTION: After forming a gate isolating layer on a semiconductor substrate, a gate forming material layer containing polysilicon and tungsten silicide, is formed on the gate isolating layer. Then, a hard mask and an anti-reflective coating are sequentially formed on the gate forming material layer. A gate etching mask is formed by selectively etching the hard mask using a photolithography process. A gate line is formed by carrying out a plasma etching process using etching gas containing Cl2, HBr, and O2 while uniformly conserving the flow rate of Cl2 : HBr.
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