| 发明名称 |
Ferroelectric device with capping layer and method of making same |
| 摘要 |
A ferroelectric device includes a ferroelectric layer and an electrode. The ferroelectric material is made of a perovskite or a layered superlattice material. A superlattice generator metal oxide is deposited as a capping layer between said ferroelectric layer and said electrode to improve the residual polarization capacity of the ferroelectric layer.
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| 申请公布号 |
US6541806(B2) |
申请公布日期 |
2003.04.01 |
| 申请号 |
US19990229883 |
申请日期 |
1999.01.14 |
| 申请人 |
SYMETRIX CORPORATION;MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HAYASHI SHINICHIRO;OTSUKI TATSUO;PAZ DE ARAUJO CARLOS A. |
| 分类号 |
H01L21/02;H01L21/316;H01L21/8242;H01L27/108;(IPC1-7):H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L21/02 |
| 代理机构 |
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